| PART |
Description |
Maker |
| TGF2954-15 |
27 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGA2579-FL TGA2579-FL-15 |
25 Watt Ku-Band GaN Power Amplifier
|
TriQuint Semiconductor
|
| HMC999 |
GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz
|
Hittite Microwave Corporation
|
| 1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies
UHV240-KH/AS
PTSA 0.5/ 9-2.5-Z
Discrete POWER & Signal Technologies 分立功率
1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器（功500瓦的瞬变电压抑制器）
1500 Watt Transient Voltage Suppressors(???500???????靛??????
Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
http://
|
| SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
sirenza.com
|
| SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
SIRENZA[SIRENZA MICRODEVICES]
|
| MJ15002 MJ15001 MJ15001-D |
Power 15A 140V Discrete PNP
Power 15A 140V Discrete NPN
Complementary Silicon Power Transistors
|
ON Semiconductor
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGH40010 |
10 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| A3G18H500-04S A3G18H500-04SR3 |
RF Power GaN Transistor
|
NXP Semiconductors
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
